Micron Announces 176-layer 3D NAND
The embedded Charge Trap Solution: successfully scaling embedded flash with logic
Self-Amplified Dual Gate Charge Trap Flash Memory for Low-Voltage Operation | Semantic Scholar
Charge Trapping - an overview | ScienceDirect Topics
Electronics | Free Full-Text | Recent Progress on 3D NAND Flash Technologies
SK hynix: memoria 4D NAND a 176 layer per smartphone e SSD del 2021 | Hardware Upgrade
What is a floating gate transistor? | TechTarget
Samsung's View on Charge Trap Flash - The Memory Guy Blog
7bits/cell flash in Floadia's AI Compute-in-Memory chip is not for SSDs – Blocks and Files
浅谈CT
Charge trap flash - Wikipedia
Nanomaterials | Free Full-Text | Challenges to Optimize Charge Trapping Non-Volatile Flash Memory Cells: A Case Study of HfO2/Al2O3 Nanolaminated Stacks
a) A floating gate NAND Flash memory cell which stores charge in the... | Download Scientific Diagram
Charge trap technology advantages for 3D NAND flash drives | TechTarget
A triple-level cell charge trap flash memory device with CVD-grown MoS2 - ScienceDirect
Color online) Schematic energy band diagram of fully programed charge... | Download Scientific Diagram
Charge trap flash - Wikipedia
a) Schematic of top-view of the dielectric charge-trapping flash... | Download Scientific Diagram
Materials | Free Full-Text | Review on Non-Volatile Memory with High-k Dielectrics: Flash for Generation Beyond 32 nm
Electronics | Free Full-Text | Recent Progress on 3D NAND Flash Technologies
Nonvolatile Poly-Si TFT Charge-Trap Flash Memory With Engineered Tunnel Barrier | Semantic Scholar
Program/Erase Cycling Enhanced Lateral Charge Diffusion in Triple-Level Cell Charge-Trapping 3D NAND Flash Memory | Semantic Scholar
Charge Loss Mechanisms of Nitride-Based Charge Trap Flash Memory Devices | Semantic Scholar
The Invention of Charge Trap Memory – John Szedon - The Memory Guy Blog
Nanomaterials | Free Full-Text | Optimal Energetic-Trap Distribution of Nano-Scaled Charge Trap Nitride for Wider Vth Window in 3D NAND Flash Using a Machine-Learning Method
Investigating the Reasons for the Difficult Erase Operation of a Charge‐Trap Flash Memory Device with Amorphous Oxide Semiconductor Thin‐Film Channel Layers - Kim - 2021 - physica status solidi (RRL) – Rapid
